leshan radio com p an y , ltd. 1 3 2 lmbt6517 l t1g sot?23 high v oltage t ransistors maximum r a tings rating symbol v alue unit collector?emitter v oltage v ceo 350 vd c collector?base v oltage v cbo 350 vd c emitter?base v oltage v ebo 5.0 vd c base current i b 25 0 madc collector current ? continuous i c 50 0 madc thermal characteristics characteristic symbol ma x unit t otal device dissipation fr? 5 board, (1) p d 225 m w t a = 25c derate above 25c 1.8 mw/c thermal resistance, junction to ambient r ja 55 6 c/w t otal device dissipation p d 300 m w alumina substrate, (2) t a = 25c derate above 25c 2.4 mw/c thermal resistance, junction to ambient r ja 41 7 c/w junction and storage t emperature t j , t stg ?55 to +150 c device marking lmbt6517 l t1 g= 1z electrical characteristics (t a = 25c unless otherwise noted.) characteristic symbol min max unit off characteristics collector?emitter breakdown voltage v (br)ceo 350 ? vdc (i c = 1.0 madc ) collector?base breakdown voltage v (br)cbo 350 ? vdc (i c = 100 adc ) emitter?base breakdown voltage v (br)ebo 6.0 ? vdc (i e = 10 adc ) collector cutoff current i cbo ? 50 nadc ( v cb = 250vdc ) emitter cutoff current i ebo ? 50 nadc ( v eb = 5.0vdc ) 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 2 emitter 3 collector 1 base ordering information device marking shipping lmbt6 517lt1g 1z 3000/tape&reel 10000/tape&reel LMBT6517LT3G 1z we declare that the material of product compliance with rohs requirements. npn silicon rev.o 1/6
leshan radio com p an y , ltd. lmbt6517 l t1g electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics dc current gain h fe ? (i c = 1.0 madc, v ce = 10 vdc) 20 ? (i c = 10madc, v ce = 10 vdc) 30 ? (i c = 30 madc, v ce = 10 vdc) 30 200 (i c = 50 madc, v ce = 10 vdc) 20 200 (i c = 100 madc, v ce = 10 vdc) 15 ? collector?emitter saturation voltage(3) v ce(sat) vdc (i c = 10madc, i b = 1.0madc) ? 0.30 (i c = 20 madc, i b = 2.0 madc) ? 0.35 (i c = 30 madc, i b = 3.0madc) ? 0.50 (i c = 50 madc, i b = 5.0 madc) ? 1.0 base ? emitter saturation voltage v be(sat) vdc (i c = 10madc, i b = 1.0madc,) ? 0.75 (i c = 20madc, i b = 2.0madc,) ? 0.85 (i c = 30madc, i b = 3.0madc,) ? 0.90 base?emitter on voltage v be(on) ? 2.0 vdc (i c = 100madc, v ce = 10vdc) small?signal characteristics current gain?bandwidth product f t 40 200 mhz (v ce = 20 vdc, i c = 10madc, f = 20 mhz) collector ?base capacitance (v cb = 20 vdc, f = 1.0 mhz) c cb ? 6.0 pf emitter ?base capacitance c eb ?80pf (v eb =0.5 vdc, f = 1.0 mhz) 3. pulse test: pulse width = 300 s, duty cycle = 2.0%. rev.o 2/6
leshan radio com p an y , ltd. v ce = 10 v lmbt6517 l t1g i c , collector current (ma) figure 1. dc current gain f t , current? gain ? bandwidth product (mhz) h fe , dc current gain v, voltage (volts) c, capacitance (pf) i c , collector current (ma) figure 2. current?gain ? bandwidth product i c , collector current (ma) figure 3. ?on? voltages i c , collector current (ma) figure 4. temperature coefficients v r , reverse voltage (volts) figure 5. capacitance r v , temperature coeffi- cients (mv/c) t j = 125c 25c ?55c t j = 25c v ce = 20 v f = 20 mhz t j = 25c v be(sat) @ i c /i b = 10 v be(on) @ v ce = 10 v v ce(sat) @ i c /i b = 10 r vc for v ce(sat) v ce(sat) @ i c /i b = 5.0 r vc for v be 25c to 125c ?55c to 25c ?55c to 125c i c i b = 10 t j = 25c c cb c eb 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 100 70 50 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 100 70 50 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 2.5 2.0 1.5 1.0 0.5 0 ?0.5 ?1.0 ?1.5 ?2.0 ?2.5 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 rev.o 3/6
leshan radio com p an y , ltd. lmbt6517 l t1g i c , collector current (ma) figure 6. turn?on time t, time (ns) resistance (normalized) i c , collector current (ma) figure 7. turn?off time figure 8. switching time test circuit t, time (ms) figure 9. thermal response t, time (ns) t d @ v be(off) = 2.0 v t r v ce(off) = 100 v i c /i b = 5.0 t j = 25c v ce(off) = 100 v i c /i b = 5.0 i b1 = i b2 t j = 25c t s t f +10.8 v ?9.2 v +v cc 50 ? sampling scope 1/2msd7000 v cc adjusted for v ce(off) = 100 v approximately ?1.35 v (adjust for v (be)off = 2.0 v) pulse width 100 ms t r , t f < 5.0 ns duty cycle < 1.0% for pnp test circuit, reverse all voltage polarities d = 0.5 single pulse z qjc(t) = r(t) r qjc t j(pk) ? t c = p (pk) z qjc(t) z qja(t) = r(t) r qja t j(pk) ? t a = p (pk) z qja(t) 0.05 0.1 single pulse 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0k 700 500 300 200 100 70 50 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 10k 7.0k 5.0k 3.0k 2.0k 1.0k 700 500 300 200 100 50 2.2 k 20 k 1.0 k ~ ~ rev.o 4/6
leshan radio com p an y , ltd. figure a design note: use of transient thermal resistance data t p p p p p t 1 1/f duty cycle =t 1 f = t 1 t p peak pulse power = p p lmbt6517lt1g rev.o 5/6
d j k l a c b s h g v 1 2 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 leshan radio company, ltd. n o t es : 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. i nch es m i ll i m e t e r s d i m m i n m a x m i n m a x a 0 . 1102 0 . 1197 2 . 80 3 . 04 b 0 . 0472 0 . 0551 1 . 20 1 . 40 c 0 . 0350 0 . 0440 0 . 89 1 . 11 d 0 . 0150 0 . 0200 0 . 37 0 . 50 g 0 . 0701 0 . 0807 1 . 78 2 . 04 h 0 . 0005 0 . 0040 0 . 013 0 . 100 j 0 . 0034 0 . 0070 0 . 085 0 . 177 k 0 . 0 1 4 0 0 . 0 2 85 0 . 35 0 . 6 9 l 0 . 0 350 0 . 0 401 0 . 89 1 . 02 s 0 . 0 830 0 . 1 039 2 . 10 2 . 64 v 0 . 0177 0 . 0236 0 . 45 0 . 60 p i n 1 . base 2 . e m i tt e r 3 . c o ll e c t o r 0.03 1 0. 8 sot-23 3 lmbt6517lt1g rev.o 6/6
|
